jiangsu changji ang electronics technology co., ltd sod-323 plastic-encap sulate diode mmsz5221bs-mmsz5259bs zener diode fea tures ? planar die construction ? ultra-small surface mo unt package ? general purpose, medium current ? ideally suited for auto mated assembly processes maximum ratings (ta=25 unless otherwise specified ) ch aracteristic symbol value unit f orward voltage (note 2) @ i f = 1 0ma v f 0.9 v po wer dissipation(note 1) p d 200 mw t hermal resistance, junction to ambient air r ja 625 / w notes:1. device mounted on ceramic pcbs; 7. 6 mm x 9.4 mm x 0.87 mm with p ad areas 25 mm 2 . 2. t e sted with pulses, tp 1.0ms. sod-323 www.cj-elec.com 1 d,apr,2015 junction t e mperature t j 150 / st orage temperature range t stg -55~ +150 /
z ener v oltage range (note 2) maximum zener impedance (note 4) maximum reverse current v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r t ype n umber code nom(v) min(v) max(v) ma ? ma ua v mms z5221b s c1 2.4 2.28 2.52 20 30 1200 0.25 100 1.0 mms z5223b s c3 2.7 2.57 2.84 20 30 1300 0.25 75 1.0 mms z5225b s c5 3.0 2.85 3.15 20 30 1600 0.25 50 1.0 mms z5226b s g1 3.3 3.14 3.47 20 28 1600 0.25 25 1.0 mms z5227b s g2 3.6 3.42 3.78 20 24 1700 0.25 15 1.0 mms z5228b s g3 3.9 3.71 4.10 20 23 1900 0.25 10 1.0 mms z5229b s g4 4.3 4.09 4.52 20 22 2000 0.25 5 1.0 mms z5230b s g5 4.7 4.47 4.94 20 19 1900 0.25 5 2.0 mms z5231b s e1 5.1 4.85 5.36 20 17 1600 0.25 5 2.0 mms z5232b s e2 5.6 5.32 5.88 20 11 1600 0.25 5 3.0 mms z5233b s e3 6.0 5.70 6.30 20 7 1600 0.25 5 3.5 mms z5234b s e4 6.2 5.89 6.51 20 7 1000 0.25 5 4.0 mms z5235b s e5 6.8 6.46 7.14 20 5 750 0.25 3 5.0 mms z5236b s f1 7.5 7.13 7.88 20 6 500 0.25 3 6.0 mms z5237b s f2 8.2 7.79 8.61 20 8 500 0.25 3 6.5 mms z5238b s f3 8.7 8.27 9.14 20 8 600 0.25 3 6.5 mms z5239b s f4 9.1 8.65 9.56 20 10 600 0.25 3 7.0 mms z5240b s f5 10 9.50 10.50 20 17 600 0.25 3 8.0 mms z5241b s h1 11 10.45 11.55 20 22 600 0.25 2.0 8.4 mms z5242b s h2 12 11.40 12.60 20 30 600 0.25 1.0 9.1 mms z5243b s h3 13 12.35 13.65 9.5 13 600 0.25 0.5 9.9 mms z5244b s h4 14 13.30 14.70 9.0 15 600 0.25 0.1 10 mms z5245b s h5 15 14.25 15.75 8.5 16 600 0.25 0.1 11 mms z5246b s j1 16 15.20 16.80 7.8 17 600 0.25 0.1 12 mms z5248b s j3 18 17.10 18.90 7.0 21 600 0.25 0.1 14 mms z5250b s j5 20 19.00 21.00 6.2 25 600 0.25 0.1 15 mms z5251b s k1 22 20.90 23.10 5.6 29 600 0.25 0.1 17 mms z5252b s k2 24 22.80 25.20 5.2 33 600 0.25 0.1 18 mms z5253b s k3 25 23.75 26.25 5.0 35 600 0.25 0.1 19 mms z5254b s k4 27 25.65 28.35 5.0 41 600 0.25 0.1 21 mms z5255b s k5 28 26.60 29.40 4.5 44 600 0.25 0.1 21 mms z5256b s m1 30 28.50 31.50 4.2 49 600 0.25 0.1 23 mms z5257b s m2 33 31.35 34.65 3.8 58 700 0.25 0.1 25 mms z5258b s m3 36 34.20 37.80 3.4 70 700 0.25 0.1 27 mms z5259b s m4 39 37.05 40.95 3.2 80 800 0.25 0.1 30 electrical characteristics t a = 25 unless otherwise specified www.cj-elec.com d , ap r,2015
www.cj-elec.com 3 typical characteristics 0 4 8 12 16 20 24 28 32 36 40 44 -5 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 0 50 100 150 200 250 11 0 1 0 0 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 1e-4 1e-3 0.01 0.1 1 10 100 123456789 1011 1 10 100 11 0 1 0 0 1 10 100 1000 10 15 20 25 30 35 40 45 1 10 100 v z @ i zt typ i cal t a values fo r m msz52xxbs series tem p erature coefficients vz , temperat ure coefficient (mv/ ) v z , nominal zener voltage (v) p o w er derating curve po wer dissipat io n p d (mw) ambient t emperature t a ( ) i zt eff e ct of zener voltage on zener impedance i z =0.25ma t a =25 i z(ac) =0.1i z(dc) f=1khz v z , nominal zener voltage (v) z zt , dynamic impedance( ? ) pulsed ty p ical leakage current i r , leakag e current ( ua) v z , nominal zener voltage (v) t a =25 t a =100 3000 t a =25 pulsed 0.5 8 . 7 6 . 2 4 . 7 6 . 0 5 . 6 5 . 1 3 . 0 4 . 3 6 . 8 7 . 5 8 . 2 9 . 1 1 0 p d =200mw 0.5 ze n er characteristics ( v z up to 10 v ) i z , zener current (ma) v z , ze ner vo ltage (v) t a =25 f=1mhz bias at 50% of v z nom ty p ical capacitance v z , nominal zener voltage (v) c, capacitance ( p f) 1v bias 0v bias 3 0 2 5 1 4 ze n er characteristics ( 11 v t o 39 v ) p d =200mw t a =25 pulsed i z , zener current (ma) v z , ze ner vo ltage (v) 1 6 1 1 1 2 2 4 1 3 1 5 1 8 2 8 3 3 3 9 3 6 2 0 2 2 2 7 d,apr,2015 notes our co mpan y curr entl y prov id e 3.0v - 39v pro ducts o n l y
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